We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission. we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-... https://allfixelectricales.shop/product-category/audio-turntable-mat/